High performance III/V RTD and PIN diode on a silicon (001) substratePROST, W; KHORENKO, V; MOFOR, A.-C et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 87, Num 3, pp 539-544, issn 0947-8396, 6 p.Article

Low-pressure metalorganic vapour phase epitaxy growth of InAs/GaAs short period superlattices on InP substratesLINDNER, A; LIU, Q; SCHEFFER, F et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 771-777, issn 0022-0248Conference Paper

Effects of (NH₄)₂S passivation on the performance of graded-base InGaAs/InP HBTsJIN, Z; NEUMANN, S; PROST, W et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 5, pp 1017-1021, issn 0031-8965, 5 p.Article

MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applicationsNEUMANN, S; SPIELER, J; BLACHE, R et al.Journal of crystal growth. 2003, Vol 248, pp 158-162, issn 0022-0248, 5 p.Conference Paper

Monodisperse aerosol particle deposition : Prospects for nanoelectronicsPROST, W; KRUIS, F. E; OTTEN, F et al.Microelectronic engineering. 1998, Vol 41-42, pp 535-538, issn 0167-9317Conference Paper

Analysis of ordering in GaInP by means of x-ray diffractionLIU, Q; LAKNER, H; SCHEFFER, F et al.Journal of applied physics. 1993, Vol 73, Num 6, pp 2770-2774, issn 0021-8979Article

Growth and characterization of AlGaAs/GaAs Bragg reflectors for non-linear optoelectronics devicesSCHEFFER, F; JOSEPH, M; PROST, W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1991, Vol 9, Num 1-3, pp 361-364Conference Paper

A nanoparticle-coated nanocrystal-gate for an InP-based heterostructure field-effect transistorDO, Q.-T; KATZER, K; MARTINEZ-ALBERTOS, J.-L et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 435-438, isbn 0-7803-8595-0, 1Vol, 4 p.Conference Paper

Circuit and application aspects of tunnelling devices in a MOBILE configurationGLÖSEKÖTTER, P; PACHA, C; GOSER, K. F et al.International journal of circuit theory and applications. 2003, Vol 31, Num 1, pp 83-103, issn 0098-9886, 21 p.Article

InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sourcesVELLING, P; AGETHEN, M; PROST, W et al.Journal of crystal growth. 2000, Vol 221, pp 722-729, issn 0022-0248Conference Paper

InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transportVELLING, P; JANSSEN, G; AGETHEN, M et al.Journal of crystal growth. 1998, Vol 195, Num 1-4, pp 117-123, issn 0022-0248Conference Paper

Metalorganic vapor phase epitaxial grown heterointerfaces to GaInP with group-III and group-V exchangePROST, W; SCHEFFER, F; LIU, Q et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 538-543, issn 0022-0248Conference Paper

High breakdown voltage InGaAs/InAlAs HFET using In_0.5Ga_0.5P spacer layerSCHEFFER, F; HEEDT, C; REUTER, R et al.Electronics Letters. 1994, Vol 30, Num 2, pp 169-170, issn 0013-5194Article

d.c.- and r.f.-characterisation of conventional and superlattice heterostructure field-effect transistors at low temperaturesBROCKERHOFF, W; PROST, W; MESCHEDE, H et al.Solid-state electronics. 1990, Vol 33, Num 11, pp 1393-1400, issn 0038-1101, 8 p.Article

Tailoring the properties of semiconductor nanowires using ion beamsRONNING, C; BORSCHEL, C; HEIMBRODT, W et al.Physica status solidi. B. Basic research. 2010, Vol 247, Num 10, pp 2329-2337, issn 0370-1972, 9 p.Article

Surface-recombination-free InGaAs/InP HBTs and the base contact recombinationJIN, Z; LIU, X; PROST, W et al.Solid-state electronics. 2008, Vol 52, Num 7, pp 1088-1091, issn 0038-1101, 4 p.Article

A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3 μm based on ordering in InGaAsPKRÄMER, Stefan; NEUMANN, S; PROST, W et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 554-557, issn 1386-9477, 4 p.Conference Paper

Polarisation-sensitive switch: An integrated intensity-independent solution for 1.3 μm based on the polarisation anisotropy of ordered InGaAsPKRÄMER, S; NEUMANN, S; PROST, W et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 6, pp 992-996, issn 0031-8965, 5 p.Conference Paper

Growth and characterization of InAlP/InGaAs double barrier RTDsNEUMANN, S; VEILING, P; PROST, W et al.Journal of crystal growth. 2004, Vol 272, Num 1-4, pp 555-558, issn 0022-0248, 4 p.Conference Paper

Buffer optimization for InP-on-Si (001) quasi-substratesKHORENKO, V; MOFOR, A. C; BAKIN, A et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 118-121, isbn 0-7803-8595-0, 1Vol, 4 p.Conference Paper

Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodesPROST, W; AUER, U; TEGUDE, F.-J et al.International journal of circuit theory and applications. 2000, Vol 28, Num 6, pp 537-552, issn 0098-9886Article

InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowthVELLING, P; FIX, W; GEISSELBRECHT, W et al.Journal of crystal growth. 1998, Vol 195, Num 1-4, pp 490-494, issn 0022-0248Conference Paper

Highly strained In_0.5Ga_0.5P as wide-gap material on InP substrate for heterojunction field effect transistor applicationSCHEFFER, F; LINDNER, A; LIU, Q et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 326-331, issn 0022-0248Conference Paper

Gate-voltage-dependent transport measurements on heterostructure field-effect transistorsPROST, W; BROCKERHOFF, W; HEIME, K et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 5, pp 646-650, issn 0018-9383Article

Scalable Electrical Properties of Axial GaAs Nanowire pn-DiodesGUTSCHE, C; LYSOV, A; REGOLIN, I et al.Journal of electronic materials. 2012, Vol 41, Num 5, pp 809-812, issn 0361-5235, 4 p.Conference Paper